Interference of electrons in backscattering through a quantum point contact

Interference of electrons in backscattering through a quantum point contact

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Scanning gate microscopy is used to locally investigate electron transport in a high-mobility two-dimensional electron gas formed in a GaAs/AlGaAs heterostructure.Using quantum point contacts, we observe branches caused by electron backscattering decorated with interference fringes similar to previous observations by vector gp68hx 12vh-012ca Topinka et al (2000 Science 289 2323).We investigate the branches at different points of a conductance plateau as well as between plateaus, and demonstrate that the most dramatic changes in branch pattern occur at the low-energy side of the conductance plateaus.The branches disappear at magnetic fields as low as 50 mT, demonstrating the importance of backscattering for the igora 9.5-18 observation of the branching effect.

The spacing between the interference fringes varies by more than 50% for different branches across scales of microns.Several scenarios are discussed to explain this observation.